4 November 1994 Deposition and characterization of a-SiC:H thin films
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192131
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
The optical and structural properties of a-SiC:H thin films, deposited by PECVD by using different carbon sources: SiH4 + CH4 and SiH4 + C2H2 gas mixtures, have been characterized by transmittance-reflectance spectroscopy in the range of wavelength 300 - 2000 nm and by IR spectroscopy in the range 400 - 4000 cm-1. By knowing the elemental composition, the results on the physical properties of the films are examined and compared.
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Francesca Demichelis, C. F. Pirri, E. Tresso, F. Valente, E. Bolzan, Valentino Rigato, "Deposition and characterization of a-SiC:H thin films", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192131; https://doi.org/10.1117/12.192131
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