4 November 1994 Deposition and characterization of a-SiC:H thin films
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192131
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
The optical and structural properties of a-SiC:H thin films, deposited by PECVD by using different carbon sources: SiH4 + CH4 and SiH4 + C2H2 gas mixtures, have been characterized by transmittance-reflectance spectroscopy in the range of wavelength 300 - 2000 nm and by IR spectroscopy in the range 400 - 4000 cm-1. By knowing the elemental composition, the results on the physical properties of the films are examined and compared.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francesca Demichelis, Francesca Demichelis, C. F. Pirri, C. F. Pirri, E. Tresso, E. Tresso, F. Valente, F. Valente, E. Bolzan, E. Bolzan, Valentino Rigato, Valentino Rigato, } "Deposition and characterization of a-SiC:H thin films", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192131; https://doi.org/10.1117/12.192131

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