4 November 1994 Electron cyclotron resonance plasma chemical vapor deposition for rugate film manufacturing
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192121
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
Electron cyclotron resonance plasma enhanced chemical vapor deposition was used to deposit thin films of SiNx of different composition from mixtures of N2 and 30% SiH4 in Ar onto different substrates. Index of refraction ranging from 2.05 to 3.8 (measured at 632.8 nm) was obtained by simply altering the gas flow ratio. A growth rate of 2 - 4 nm/min was obtained depending on experimental conditions. The data was used in the design and computer-controlled fabrication of one- and two-band rugate optical interference filters. The excursion of the continuously varying refractive index was chosen to be 0.8 - 1.2, and window functions and matching layers at both sides were employed for sidelobe suppression. Measured reflection patterns of filters show good agreement with theoretically simulated ones. Filters designed for a center wavelength of 1.0 micrometers , with a total thickness of 2.1 micrometers , achieved maximal reflectance of 97% in the stopband. Typical bandwidth was 240 nm. The two-band filter was designed for stopbands at 1.0 micrometers and 0.77 micrometers with reflectance of 98% and 96% and bandwidths of 150 nm and 120 nm, respectively. Total thickness was 3.33 micrometers . Deposition of filters on optical fibers was also successfully undertaken using one of the fibers for in-situ monitoring of the deposition process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel V. Bulkin, Pavel V. Bulkin, Pieter L. Swart, Pieter L. Swart, Beatrys M. Lacquet, Beatrys M. Lacquet, } "Electron cyclotron resonance plasma chemical vapor deposition for rugate film manufacturing", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192121; https://doi.org/10.1117/12.192121
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