4 November 1994 Growth of low and high refractive index dielectric films: an in situ ellipsometry study
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192074
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
Dielectric films exhibit very different and complex behaviors during thickness growth, leading generally to a variation of the refractive index in the depth of the film. Several causes of index inhomogeneity are examined: chemical interaction between film and substrate, transition layer, surface layer, etc. Their detection from in situ ellipsometric measurements is presented in the case of CaF2, SiO2 and TiO2 films. Complementary techniques (XPS, HRTEM and AFM) have been used for assessment of realistic optical models.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Josette Rivory, Josette Rivory, S. Fisson, S. Fisson, Jean Marc Frigerio, Jean Marc Frigerio, V. Nguyen Van, V. Nguyen Van, G. Vuye, G. Vuye, Yangshu Wang, Yangshu Wang, Florin Abeles, Florin Abeles, } "Growth of low and high refractive index dielectric films: an in situ ellipsometry study", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192074; https://doi.org/10.1117/12.192074
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