4 November 1994 Growth monitoring of W/Si multilayers by x-ray reflectivity and kinetic ellipsometry
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192085
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
This paper presents a new type of X-ray reflectometer that measures the grazing incidence reflectivity at an energy of 8 keV for angles from 0 - 2.5 degree(s) simultaneously. With an acquisition time of 5 s this allows to analyze the layer growth during a deposition process with a thickness accuracy in the sub-nm range. As a second independent method we are using kinetic and spectroscopic ellipsometry to follow the same deposition process.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eike Lueken, Eike Lueken, Eric Ziegler, Eric Ziegler, P. Hoeghoej, P. Hoeghoej, Andreas K. Freund, Andreas K. Freund, Erich Gerdau, Erich Gerdau, Alain Fontaine, Alain Fontaine, } "Growth monitoring of W/Si multilayers by x-ray reflectivity and kinetic ellipsometry", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192085; https://doi.org/10.1117/12.192085
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