4 November 1994 Optical properties of Si3N4 films produced by reactive dc-magnetron sputtering
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Proceedings Volume 2253, Optical Interference Coatings; (1994) https://doi.org/10.1117/12.192075
Event: 1994 International Symposium on Optical Interference Coatings, 1994, Grenoble, France
Abstract
Thin films of Si3N4 with thicknesses between 50 nm and 600 nm were deposited on different substrates by reactive d.c.-magnetron sputtering. All films proved to be stoichiometric by Rutherford Back Scattering and only small amounts of oxygen and water in the film's bulk were detected by IR absorption measurements. The refractive index of the films was calculated from optical transmission data. Increasing both the working gas (Argon) flow and the reactive gas (Nitrogen) flow resulted in a decrease of the refractive index of the thin films. This is due to the lower density of the thin films prepared at either higher working gas flow or higher total gas pressure. At a wavelength of 633 nm the refractive index ranged between 1.86 and 2.01. All films shows an amorphous microstructure. The Si3N4 deposition rate on the substrates was found to be linear depend on the d.c. sputtering power from 0.6 kW up to 2.2 kW. The fundamental absorption edge shifted to higher energy values by increasing the reactive gas flow. The 10% transmission value was found at a wavelength of 233 nm (5.33 eV) with the N2 flow at 50 sccm and at 213 nm (5.83 eV) with the N2 flow at 200 sccm.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eduard P. Rille, Eduard P. Rille, Michael Huter, Michael Huter, } "Optical properties of Si3N4 films produced by reactive dc-magnetron sputtering", Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192075; https://doi.org/10.1117/12.192075
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