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Supporting 256-Mb and 1-Gb DRAM mask-making requirements with the Lepton EBES4 e-beam reticle generator
Poly(cyclohexyl 2-cyanoacrylate-co-ethoxyethyl 2-cyanoacrylate) as a positive-tone electron beam resist for phase-shift mask fabrication
Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system
Subresolution artifacts optimized for use with Canon's CQUEST illumination system and their cost-effective realization using the Lepton EBES4 e-beam reticle generator
State-of-the-art material handler for the EBES4 e-beam reticle generator: key contributor to accuracy