3 November 1994 Development of 0.35-μm generation reticles using advanced mask blanks
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191928
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
The 0.35 micrometers generation of semiconductor technology requires reticles which have CD uniformity of 0.03 micrometers (3 (sigma) ), registration accuracy of 0.05 micrometers (3 (sigma) ) and which are free from defects 0.3 micrometers or smaller in size. The CD and registration targets have been achieved through enhancement of exposure systems and optimization of processes. However, it is essential to improve materials to meet the reduced-defect requirement. In this work the development of advanced mask blanks has contributed to realizing reticles of improved quality. Of particular significance was the reduction in pinhole density 0.5 micrometers or greater in size in mask blanks, by holding dust flying up to the minimum through the use of controlling the ventilation and vent speed of vacuum systems, etc. Formation of contact holes on mask blanks was made easier by improving the surface condition of the chrome oxide layer for making 1.75 micrometers contact holes for the 0.35 micrometers generation. Patterns were formed with reduced edge roughness and vertical walls to improve reticle quality. The advanced mask blanks have made it possible to increase yields and improve quality of 0.35 micrometers generation reticles.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Tanaka, Yoshiyuki Tanaka, M. Matsuda, M. Matsuda, Tsuyoshi Tanaka, Tsuyoshi Tanaka, Ryoichi Kobayashi, Ryoichi Kobayashi, "Development of 0.35-μm generation reticles using advanced mask blanks", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191928; https://doi.org/10.1117/12.191928


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