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3 November 1994 Development of novel W/Si materials for the single-layered attenuated phase-shifting mask
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191964
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
A novel material system of metal W corpuscles dispersed in silicon dioxides layer (W/Si film) has been developed for the single-layered attenuated phase-shifting mask (SAttPSM) for i-line. The W/Si film has been proved to have a wide flexibility in designing the optical transmittance and the film thickness by changing the sputtering conditions such as the O2 ratio to the sputtering gas (O2 and Ar) flow rate and the RF power supplied. The W/Si shifter film are also found to have some electric conductivity, which again depends on the sputtering conditions, tough chemical durability against both hard acid and basic solutions, and sufficient adhesion to quartz substrate SAttPSM, fabricated with the W/Si film and having the thickness of 1575 angstroms and the transmittance of 6.3%, showed the phase-shifting angle of 177.9 at i-line wavelength. The depth of focus around 0.35 micrometers hole pattern was widened from 0.6 micrometers to 1.4 micrometers .
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideaki Mitsui, Hideki Suda, Yoichi Yamaguchi, Kenji Matsumoto, Masaru Mitsui, S. Mitsui, and Yasushi Okubo "Development of novel W/Si materials for the single-layered attenuated phase-shifting mask", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191964
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