3 November 1994 Fabrication and pattern transfer of optical proximity correction (OPC) mask
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191929
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
An application of a mask with serif patterns to a 0.8 micrometers rule mask ROM programming layer is discussed. A serif pattern is the unprinting size pattern added to the corner of original pattern. It suppresses the corner rounding caused by the lack of resolution performance of a lithography exposure system. We aimed to make 1.0 micrometers square pattern with g-line (436 nm). There are some difficulties in application of optical proximity correction (OPC) mask. One of the problems is the optimization of the mask design to be applied to get the appropriate correction effect. We evaluated it by simulation and experiment. The second is the increase in EB data volume. We split mask data into periodic common data with serifs for cell pattern and random ROM code data for programming to compact the data volume. The other is the printability and inspection of mask defects. The OPC mask shows the high printability of defects because of the violation of the mask design. To detect all the printable defects, mask inspection needs high sensitivity. In the inspection with high sensitivity, the extrusion of pattern caused by EB proximity effect becomes to be detected as false defect. To reduce the false defects, we optimized the EB exposure process. In order to use the OPC masks in actual production, mask design for application should be optimized not only in the viewpoint of pattern correction effect but also in the viewpoint of mask fabrication and inspection.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emiko Sugiura, Hisashi Watanabe, Tadashi Imoriya, Yoshihiro Todokoro, "Fabrication and pattern transfer of optical proximity correction (OPC) mask", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191929; https://doi.org/10.1117/12.191929
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