Translator Disclaimer
3 November 1994 Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system
Author Affiliations +
Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191942
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
The SiN membranes were deposited by using high temperature LPCVD system. The SiN films deposited over 1000 degree(s)C showed the suitable properties for X-ray mask, such as well- controlled tensile stress of 5 X 107 Pa, high optical transmittance over 95% and low impurity concentrations. The high optical transmittance of the SiN films deposited over 1000 degree(s)C was related to the high N/Si. The X-ray masks fabricated by using the SiN membranes deposited at 1000 degree(s)C showed the high optical transmittance of about 92% and X-ray durability. The pattern position displacement induced by SR irradiation was simulated using FEM calculation with qualitative agreement.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuneaki Ohta, R. Kumar, Shuichi Noda, Masanori Kasai, and Hiroshi Hoga "Fabrication of reliable x-ray mask using high-temperature deposited SiN membrane by low-pressure chemical vapor deposition system", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191942
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top