MEBES IV position accuracy improvement on the 5-inch mask

Ki Jong Kim; Kun-Taek Park; Jung K. Oh; Hong S. Chun

doi:10.1117/12.191932

3 November 1994 MEBES IV position accuracy improvement on the 5-in. mask

Ki Jong Kim, Kun-Taek Park, Jung K. Oh, Hong S. Chun

Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191932
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan

Abstract

As the wafer process requirements for the high grade devices are getting tighter than before, the requirements for the tighter accuracy of layer to layer among one device is dramatically increased up to the equipment specification itself that the equipment supplier propose thru their own test method. Eventhough the size of photomask is trend to the larger one as 6inch 25Omil and 7inch, still 5inch mask is the major product up to the l6mega memory device. Also, when we consider the required investment in wafer process to set up the large sized mask, the improvement of accuracy in 5inch mask is still realistic issue to the photomask manufacturer. In this paper, we evaluate the MEBES IV accuracy capability thru the acceptance test procedure of EFEC in 5inch mask and compare 5inch result with the 6inch result to clear the accuracy criteria of 5inch mask. Three major factors of position error which we suppose are identified using the factorial design of experiment. And the Ti super cassette is evaluated to clear the effect of cassette.

Citation Download Citation

Ki Jong Kim, Kun-Taek Park, Jung K. Oh, and Hong S. Chun "MEBES IV position accuracy improvement on the 5-in. mask", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); https://doi.org/10.1117/12.191932

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