3 November 1994 Manufacturing of half-tone phase-shift masks I: blank
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191935
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
Half-tone phase shift mask (HT-PSM) blanks for i-line (365 nm) and g-line (436 nm) lithography, using chromium composites as a half-tone shifter, are brought into production. A bilayer structure of a 10 - 20 nm thick opaque, conductive chrome layer and a phase-shifting CrON layer is proposed, which can be formed by continuous deposition of the two layers and etched continuously by the process similar to that of the conventional chrome photomask. It shows low visible light transmission of less than 30% so that it can be inspected, and also shows enough conductivity to decay the excess charge during electron beam writing. HT- PSMs made of these blanks can be cleaned by sulfuric acid at 100 degree(s)C and can be used at least up to an irradiation of 1 MJ/cm2, when used for i-line exposure. The specification for the transmission is (target +/- 1)% for any point on any plate, and 0.7% range for any point on one plate, where the target ranges from 6% to 10%. The specification for the phase shift is currently (180+/- 10) degree(s).
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Mohri, Hiroshi Mohri, Keiji Hashimoto, Keiji Hashimoto, T. Tominaga, T. Tominaga, Yasutaka Morikawa, Yasutaka Morikawa, Junji Fujikawa, Junji Fujikawa, Hiroyuki Inomata, Hiroyuki Inomata, Y. Iimura, Y. Iimura, Wataru Gotoh, Wataru Gotoh, Masahiro Takahashi, Masahiro Takahashi, Hisatake Sano, Hisatake Sano, } "Manufacturing of half-tone phase-shift masks I: blank", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191935; https://doi.org/10.1117/12.191935
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