3 November 1994 Manufacturing of half-tone phase-shift masks II: writing and process
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994); doi: 10.1117/12.191937
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
A half-tone phase shift mask process has been developed. The writing and process for normal masks are found to be applicable to HT-PSMs. A dry etch process has been adopted to etch the shifter. Several characteristics of HT-PSMs such as CD uniformity, CD linearity, edge roughness and corner rounding, positional accuracy in the EB process, selectivity in dry etch, pattern profile, durability against cleaning, pelliclization and a blind pattern are evaluated. The process shows a good performance sufficient for first generation 64 MDRAM mask making. The EB writing causes no charge-up problem. The selectivity of HT-shifter to an i-line resist and an new type EB resist in dry etch is satisfactory and the selectivity to a fused silica substrate is more than 300. An exposure test was conducted with our HT-PSM. Coherency factor ((sigma) ) of a stepper is found to strongly affect the defocus range and exposure latitude.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Miyashita, Minoru Naitoh, Toshiharu Nishimura, T. Tomita, M. Katoh, Kazuo Suwa, Masa-aki Kurihara, N. Tarumoto, D. Tagaya, S. Ishikita, Hiroyuki Nakamura, Naoya Hayashi, "Manufacturing of half-tone phase-shift masks II: writing and process", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191937; https://doi.org/10.1117/12.191937
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KEYWORDS
Photomasks

Etching

Dry etching

X-ray technology

Manufacturing

Semiconducting wafers

Transmittance

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