3 November 1994 Poly(cyclohexyl 2-cyanoacrylate-co-ethoxyethyl 2-cyanoacrylate) as a positive-tone electron beam resist for phase-shift mask fabrication
Author Affiliations +
Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191934
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
Poly(cyclohexyl 2-cyanoacrylate) (PCHCA), a positive tone electron beam resist, has both high sensitivity and high dry-etching durability. Therefore, PCHCA has been successfully used for the fabrication of conventional chromium photomasks using dry-etching. However, when PCHCA was applied to the phase-shift mask fabrication, cracks were observed in resist patterns on the SiO2 shifter layer. The cyclic-alkyl group of PCHCA enhances dry-etching durability but causes the cracks in resist patterns. On the other hand, the noncyclic group prevent cracks, but reduces dry-etching durability. However, the copolymer of cyclohexyl 2- cyanoacrylate and ethoxyethyl 2-cyanoacrylate was delineated on SiO2 without generating cracks and reducing dry-etching durability, with high sensitivity. Using this copolymer, the phase-shift masks having SiO2 shifters with vertical walls were fabricated by dry-etching process in short time.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Tamura, Akira Tamura, Masaji Yonezawa, Masaji Yonezawa, Mitsuyoshi Sato, Mitsuyoshi Sato, T. Okuyama, T. Okuyama, } "Poly(cyclohexyl 2-cyanoacrylate-co-ethoxyethyl 2-cyanoacrylate) as a positive-tone electron beam resist for phase-shift mask fabrication", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191934; https://doi.org/10.1117/12.191934
PROCEEDINGS
9 PAGES


SHARE
Back to Top