3 November 1994 Practical method of phase-shifting mask fabrication
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Proceedings Volume 2254, Photomask and X-Ray Mask Technology; (1994) https://doi.org/10.1117/12.191927
Event: Photomask Japan '94, 1994, Kawasaki City, Kanagawa, Japan
Abstract
Phase-shifting mask (PSM) fabrication techniques have been investigated in order to use PSMs in the manufacturing of 0.3 micrometers memory devices. Comparison of various PSM methods resulted in selection of the SOG (spin on glass)-on-chrome structure. The alternating-type method is used for the wiring layer and the outrigger-type method is used for the hole layer. New techniques are needed for fabricating the PSMs, and the following technologies have been developed or are under development: (1) e-beam writing and process, (2) SOG process, and (3) inspection and repair. Defect free SOG-on-chrome PSMs are available because SOG process is a low defect density process. PSMs and negative i-line resist have been used to experimentally manufacture 0.35 micrometers memory devices, thus demonstrating that SOG-on- chrome PSMs are currently the most practical for memory device manufacturing.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Morihisa Hoga, Yasuhiro Koizumi, Fumio Mizuno, H. Nakaune, "Practical method of phase-shifting mask fabrication", Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191927; https://doi.org/10.1117/12.191927
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