Preparation of photo-sensitive CuInGe2 thin film hetero-structures and investigation of its opto-electronic properties

M. A. Abdullaev; J. K. Amirkhanova; R. M. Gadjieva; M. A. Kakagasanov; P. P. Khokhlachov

doi:10.1117/12.185422

9 September 1994 Preparation of photosensitive CuInGe₂ thin film heterostructures and investigation of its optoelectronic properties

M. A. Abdullaev, J. K. Amirkhanova, R. M. Gadjieva, M. A. Kakagasanov, P. P. Khokhlachov

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Proceedings Volume 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII; (1994) https://doi.org/10.1117/12.185422
Event: Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, 1994, Freiburg, Germany

Abstract

p-CuInSe₂ single crystals and films are produced. Charge carriers mobility and carriers density reaches as high as 6 - 10 cm²/V sec and 4 - 5 X 10¹⁷ cm^-3, respectively, in the films. A longwave exponential edge of quantum efficiency is 1.0 - 1.15 eV, photo-e.m.f. being invariable up to 2.5 eV. Thin film solar cells based on p-CuInSe/n-CdS heterojunctions are produced on the glass and mica substrates. The best HJ gave V_oc equals 0.85 V; J_sc equals 9.7 mA/cm at 300 K under illumination by 50 mW/cm, with 6 - 7% light efficiency.

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M. A. Abdullaev, J. K. Amirkhanova, R. M. Gadjieva, M. A. Kakagasanov, and P. P. Khokhlachov "Preparation of photosensitive CuInGe₂ thin film heterostructures and investigation of its optoelectronic properties", Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); https://doi.org/10.1117/12.185422

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