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9 September 1994 Preparation of photosensitive CuInGe2 thin film heterostructures and investigation of its optoelectronic properties
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Proceedings Volume 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII; (1994) https://doi.org/10.1117/12.185422
Event: Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, 1994, Freiburg, Germany
Abstract
p-CuInSe2 single crystals and films are produced. Charge carriers mobility and carriers density reaches as high as 6 - 10 cm2/V sec and 4 - 5 X 1017 cm-3, respectively, in the films. A longwave exponential edge of quantum efficiency is 1.0 - 1.15 eV, photo-e.m.f. being invariable up to 2.5 eV. Thin film solar cells based on p-CuInSe/n-CdS heterojunctions are produced on the glass and mica substrates. The best HJ gave Voc equals 0.85 V; Jsc equals 9.7 mA/cm at 300 K under illumination by 50 mW/cm, with 6 - 7% light efficiency.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Abdullaev, J. K. Amirkhanova, R. M. Gadjieva, M. A. Kakagasanov, and P. P. Khokhlachov "Preparation of photosensitive CuInGe2 thin film heterostructures and investigation of its optoelectronic properties", Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); https://doi.org/10.1117/12.185422
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