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7 September 1994 Microwave and rf PECVD of SiOx and SiOxNy thin films
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Plasma-enhanced chemical vapor deposition (PECVD) offers an alternate route to optical thin films, but the relative merits vs conventional methods and between different excitation processes must be evaluated. We investigated the microwave and rf PECVD of SiOx and SiOxNy films using tetraethylorthosilicate (TEOS) mixed with nitrogen, oxygen or nitrous oxide. Plasma emission spectroscopy revealed variations in reactive species' concentrations for different process conditions. Deposition rates were traced for two series of microwave PECVD reactions, and are compared to other processes. For both rf and microwave PECVD processes, film stoichiometry was characterized by IR and Auger spectroscopy. Optical properties were assessed by ellipsometry, IR and visible spectroscopy. Both microwave and rf PECVD process conditions were identified that form SiOx with less than 2% residual carbon. By varying process conditions, one can span a broad range of SiOxNy formulations. Variations in optical properties and film microhardness with changing film stoichiometry are discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nancy L.S. Yamasaki, William P. Klapp, and Larry Malon "Microwave and rf PECVD of SiOx and SiOxNy thin films", Proc. SPIE 2262, Optical Thin Films IV: New Developments, (7 September 1994);

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