14 September 1994 Ellipsometric measurements on SiO2 by intensity ratio technique
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A PSA photometric ellipsometric technique is used to measure the ellipsometric parameters, (psi) and (Delta) . Taking intensity ratios of A equals I((pi) /4+dp,dA)/I((pi) 4+dp/,(pi) 2+dA) and B equals I(-(pi) /4+dp,dA)/I(-(pi) /4+dp,(pi) /2+dA) to their first order approximation under small azimuth deviations of polarizer (dp) and analyzer (dA), we find that at fixed dA these two ratios have opposite gradient with respect to dp and intersect to each other at a special dp where Aequals B EQ tan2(psi) , and the position of this dp is linearly related to cos (Delta) . For comparison, (psi) and (Delta) of a SiO2/Si thin film are measured by conventional null ellipsometry and intensity ratio technique. An higher percentage error on (Delta) is expected for this PSA system. The source of errors will be discussed.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Faye Chao, Yu-Faye Chao, C. S. Wei, C. S. Wei, Wei-Te Lee, Wei-Te Lee, Shy Chaung Lin, Shy Chaung Lin, Tien Sheng Chao, Tien Sheng Chao, } "Ellipsometric measurements on SiO2 by intensity ratio technique", Proc. SPIE 2265, Polarization Analysis and Measurement II, (14 September 1994); doi: 10.1117/12.186666; https://doi.org/10.1117/12.186666

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