14 September 1994 Eight-element-stressed Ge:Ga linear array: development and performance
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Abstract
We have developed an eight-element stressed Ge:Ga linear array. It has a compact and stable structure. The pixel size is 0.9 X 0.9 X 0.9 mm3, the pitch of the array is 1.0 mm, and the total sensitive area is 8.0 mm X 1.0 mm. The longer wavelength cut-off is 200 microns, and the peak responsivity is 100 A/W in a high-background condition including cavity efficiencies. It has been demonstrated that this array has a useful performance in the high-background condition, such as for airborne and balloon-borne instruments. The structure of the stress assembly is provably extendable up to sixteen and more.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Shibai, Hiroshi Shibai, Haruyuki Okuda, Haruyuki Okuda, Hiroshi Murakami, Hiroshi Murakami, Takao Nakagawa, Takao Nakagawa, Norihisa Hiromoto, Norihisa Hiromoto, Mikio Fujiwara, Mikio Fujiwara, Hiroshi Kawamata, Hiroshi Kawamata, Kenichi Okumura, Kenichi Okumura, Shin'ichiro Makiuti, Shin'ichiro Makiuti, } "Eight-element-stressed Ge:Ga linear array: development and performance", Proc. SPIE 2268, Infrared Spaceborne Remote Sensing II, (14 September 1994); doi: 10.1117/12.185825; https://doi.org/10.1117/12.185825
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