14 September 1994 Eight-element-stressed Ge:Ga linear array: development and performance
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Abstract
We have developed an eight-element stressed Ge:Ga linear array. It has a compact and stable structure. The pixel size is 0.9 X 0.9 X 0.9 mm3, the pitch of the array is 1.0 mm, and the total sensitive area is 8.0 mm X 1.0 mm. The longer wavelength cut-off is 200 microns, and the peak responsivity is 100 A/W in a high-background condition including cavity efficiencies. It has been demonstrated that this array has a useful performance in the high-background condition, such as for airborne and balloon-borne instruments. The structure of the stress assembly is provably extendable up to sixteen and more.
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Hiroshi Shibai, Haruyuki Okuda, Hiroshi Murakami, Takao Nakagawa, Norihisa Hiromoto, Mikio Fujiwara, Hiroshi Kawamata, Kenichi Okumura, Shin'ichiro Makiuti, "Eight-element-stressed Ge:Ga linear array: development and performance", Proc. SPIE 2268, Infrared Spaceborne Remote Sensing II, (14 September 1994); doi: 10.1117/12.185825; https://doi.org/10.1117/12.185825
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