17 October 1994 480 x 2 hybrid HgCdTe infrared focal plane arrays
Author Affiliations +
To meet the sensitivity and resolution requirements of high-performance long-wavelength infrared (LWIR) imaging systems, we developed hybrid HgCdTe 480 X 2 infrared focal plane arrays (IRFPAs) for the 8 - 10 micrometers band. We connected the hybrids using indium bumps and a sapphire wiring substrate to reduce the thermal expansion mismatch between the silicon readout circuits and the photodiode arrays. Using the mature liquid phase epitaxy (LPE) technology and a CdZnTe substrate, we fabricated LWIR photodiode arrays. Each photodiode array consists of 240 X 2-element n+/n/p diodes formed by boron implantation. The arrays have an average zero-bias resistance of 3.8 M(Omega) and a shunt resistance of more than 100 M(Omega) for a 10.5 micrometers cutoff wavelength. For the readout devices, we used n-channel charge coupled devices (CCDs) with charge capacities greater than 4 X 107 electrons, and 4 signal outputs capable of 6 MHz data rates. The input stages of the CCD include skimming and partitioning functions. Operating at 80 K, the arrays had a mean laboratory D*(lambda p) of 6.4 X 1010 cmHz0.5/W with f/1.2 optics. The detectivity variation ((sigma) /m) was 14%, and the operable pixel yield exceeded 99%.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Miyamoto, Yoshihiro Miyamoto, Kousaku Yamamoto, Kousaku Yamamoto, Masahiro Tanaka, Masahiro Tanaka, Akira Sawada, Akira Sawada, Kazuya Kubo, Kazuya Kubo, } "480 x 2 hybrid HgCdTe infrared focal plane arrays", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); doi: 10.1117/12.188656; https://doi.org/10.1117/12.188656


Back to Top