Paper
17 October 1994 Recent results on quantum-well intersubband infrared detectors
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Abstract
Some recent results on GaAs quantum well intersubband IR detectors for the long wavelength infrared are presented. These include studies of a systematic series of samples grown by molecular beam epitaxy (MBE) at three different facilities, and of multicolor detectors. In the first part, we compare performance of different detectors to address practical issues related to producibility using this new approach to infrared detection. We show that detectors made with specifications provided to several MBE facilities yield good results, which implies that these detectors are compatible with standard GaAs technology. We also show that the state-of-the- art GaAs-MBE layers are extremely uniform making this technology suitable for large focal plane arrays. In the second part, we apply the flexibility provided by the MBE growth technique in fabricating a voltage selectable multicolor detector.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Chun Liu "Recent results on quantum-well intersubband infrared detectors", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); https://doi.org/10.1117/12.188631
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Cited by 1 scholarly publication.
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KEYWORDS
Quantum well infrared photodetectors

Sensors

Gallium arsenide

Quantum wells

Infrared detectors

Resistance

Standards development

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