17 October 1994 SOFRADIR second-generation IRFPA technology: recent developments
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Abstract
Sofradir has developed a series of products by using the second generation IRFPA technology developed by the French research laboratory Lir with the support of the French MoD. This technology is based on the use of MCT photovoltaic diodes coupled to silicon readout circuit thanks to indium bump technique. The maturity is so good that producibility of such high performance, high complexity components was demonstrated several years ago. As a consequence, Sofradir produces now in quantities large IRFPAs sensitive in the 8 - 12 micrometers waveband. Beyond this success, Lir and Sofradir continue to update the technology and to build new products. Developments are on progress for long monolithic TDI arrays 3 to 5 and 8 to 12 micrometers , 480 X 4, 576 X 4 or staring arrays using CMOS or CCD readout circuits. All the work is performed within the frame of producibility and reliability.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Pierre Chatard, "SOFRADIR second-generation IRFPA technology: recent developments", Proc. SPIE 2269, Infrared Technology XX, (17 October 1994); doi: 10.1117/12.188658; https://doi.org/10.1117/12.188658
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