PROCEEDINGS VOLUME 2274
SPIE'S 1994 INTERNATIONAL SYMPOSIUM ON OPTICS, IMAGING, AND INSTRUMENTATION | 24-29 JULY 1994
Infrared Detectors: State of the Art II
IN THIS VOLUME

4 Sessions, 24 Papers, 0 Presentations
SPIE'S 1994 INTERNATIONAL SYMPOSIUM ON OPTICS, IMAGING, AND INSTRUMENTATION
24-29 July 1994
San Diego, CA, United States
IR Detector Material Growth
Proc. SPIE 2274, MBE HgCdTe infrared focal plane array (IRFPA) flexible manufacturing, 0000 (7 October 1994); doi: 10.1117/12.189243
Proc. SPIE 2274, Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector, 0000 (7 October 1994); doi: 10.1117/12.189245
Proc. SPIE 2274, Recent progress with in-situ monitoring of mercury cadmium telluride (MCT) growth, 0000 (7 October 1994); doi: 10.1117/12.189246
IR Detector Material Characterization
Proc. SPIE 2274, Point defects in HgCdTe by deep-level transient spectroscopy (DLTS), 0000 (7 October 1994); doi: 10.1117/12.189247
Proc. SPIE 2274, Optical absorption coefficient of CdZnTe, 0000 (7 October 1994); doi: 10.1117/12.189248
Proc. SPIE 2274, Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes, 0000 (7 October 1994); doi: 10.1117/12.189249
Proc. SPIE 2274, Crosstalk characterization in photodiode detector array using a 1-um optical scanning spot laser beam, 0000 (7 October 1994); doi: 10.1117/12.189226
Proc. SPIE 2274, Impulse coupling between laser and HgCdTe, 0000 (7 October 1994); doi: 10.1117/12.189227
Proc. SPIE 2274, Properties of the HgCdTe films, 0000 (7 October 1994); doi: 10.1117/12.189228
Poster Session
Proc. SPIE 2274, N and K measurement of MCT and PST by polarized reflectometry, 0000 (7 October 1994); doi: 10.1117/12.189229
Proc. SPIE 2274, Pulsed-laser-induced damage on the HgCdTe surface, 0000 (7 October 1994); doi: 10.1117/12.189230
Proc. SPIE 2274, Optical refractive and reflective properties of Hg1-xCdxTe, 0000 (7 October 1994); doi: 10.1117/12.189231
Proc. SPIE 2274, Properties of the oxidation on Hg1-xCdxTe by ellipsometry, 0000 (7 October 1994); doi: 10.1117/12.189232
Proc. SPIE 2274, Experimental investigation of the performance of GaAs/AlGaAs quantum well infrared photodetectors from the Industrial Microelectronics Center, Sweden, 0000 (7 October 1994); doi: 10.1117/12.189233
Proc. SPIE 2274, Selectively plated infrared-sensitive lead sulfide layers, 0000 (7 October 1994); doi: 10.1117/12.189234
IR Detector and Focal Plane Arrays
Proc. SPIE 2274, Infrared image sensor status, 0000 (7 October 1994); doi: 10.1117/12.189235
Proc. SPIE 2274, Recent advances in staring hybrid focal plane arrays: comparison of HgCdTe, InGaAs and GaAs/AlGaAs detector technologies, 0000 (7 October 1994); doi: 10.1117/12.189236
Proc. SPIE 2274, Integrated two-color detection for advanced focal plane array (FPA) applications, 0000 (7 October 1994); doi: 10.1117/12.189237
Proc. SPIE 2274, Optimization of SPRITE integration and readout lengths, 0000 (7 October 1994); doi: 10.1117/12.189238
Proc. SPIE 2274, Monte Carlo simulations of the cross talk in InSb matrices, 0000 (7 October 1994); doi: 10.1117/12.189239
Proc. SPIE 2274, Low-cost uncooled ferroelectric detector, 0000 (7 October 1994); doi: 10.1117/12.189240
Proc. SPIE 2274, Infrared detectors for 2- to 220-um astronomy, 0000 (7 October 1994); doi: 10.1117/12.189241
Proc. SPIE 2274, Wave packet simulations of escape and capture probabilities in multiquantum-well infrared detectors, 0000 (7 October 1994); doi: 10.1117/12.189242
Proc. SPIE 2274, Effect of the OH ions on SiO2/SPG/SiO2/InSb device stability, 0000 (7 October 1994); doi: 10.1117/12.189244
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