7 October 1994 Experimental investigation of the performance of GaAs/AlGaAs quantum-well infrared photodetectors from the Industrial Microelectronics Ctr., Sweden
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Abstract
In this paper we present an experimental investigation of the performance of GaAs/AlGaAs multiple quantum well photodetectors. The purpose of this exercise was to independently evaluate and verify the responsivity of the GaAs/AlGaAs quantum well infrared photodetectors developed at the Industrial Microelectronics Center in Sweden. These devices use 2D gratings to couple radiation into the detectors and a cladding layer to enhance the coupling of radiation. The devices were of two types: those optimized for high detectivity, and those optimized for high quantum efficiency. The tests performed on these devices included measurement of optical responsivity vs. bias, spectral response, Detectivity (D*), and measurement of cross-talk between pixels. Several interesting observations were made during the investigation and will be reported in the paper.
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Anjali Singh, Steven E. Anderson, Rodolfo A. Ramos, Raymond K. Purvis, David A. Cardimona, N. Gieson, D. Thompson, D. T. Goring, Jan Y. Andersson, Lennart Lundqvist, "Experimental investigation of the performance of GaAs/AlGaAs quantum-well infrared photodetectors from the Industrial Microelectronics Ctr., Sweden", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189233; https://doi.org/10.1117/12.189233
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