Infrared imaging technology has matured dramatically in the past several years and the progress of this technology is reflected in many ways. Staring array format size has progressed in parallel with the growth in size of dynamic random access memory. Chip interfaces are being simplified and in some cases the output format is directly compatible with RS 170 video standards. At the same time, new chip functions such as pixel selection and electronic zoom are being incorporated on the focal plane. Operational temperatures have been increased to 180 K for 5 micrometers medium wavelength staring sensors, and in a few years uncooled 8 to 12 micrometers long wavelength sensors will be commonly available. New quantum well materials technology based upon III-V semiconductors has been rapidly developed to give imaging demonstrations for comparison with PtSi, HgCdTe and InSb. PtSi and InSb commercial infrared imaging cameras are now widely available. InSb, HgCdTe, and extrinsic silicon technology has emerged from demanding military applications to support astronomy needs for more efficient use of precious telescope time. The support of key producibility contracts has resulted in a significant decrease in sensor cost.