7 October 1994 Molecular beam epitaxy (MBE) HgCdTe infrared focal plane array (IRFPA) flexible manufacturing
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Abstract
Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe multilayer wafers with 128 X 128 detector arrays. The heterostructure photodetectors were of the p-on-n planar configuration. Device data show that MBE LWIR diode test structures have performance that equals that of p-on-n double heterostructure photodiodes made by LPE. Due to the special attention given to understanding and reducing epilayer growth-induced defects, we have achieved improvements in FPA operability values from 92% to 98%. These improvements have resulted in the demonstration of a 128 X 128 FPA hybrid that had detectivity (D*) background limited performance when operating at 80 K in a tactical background environment. Mean D* was 1.28 X 1011 cmHz1/2/W. The corresponding mean NE(Delta) T was an excellent 5.9 mK.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose M. Arias, Jose M. Arias, Majid Zandian, Majid Zandian, John G. Pasko, John G. Pasko, Jagmohan Bajaj, Jagmohan Bajaj, Lester J. Kozlowski, Lester J. Kozlowski, William E. Tennant, William E. Tennant, Roger E. DeWames, Roger E. DeWames, "Molecular beam epitaxy (MBE) HgCdTe infrared focal plane array (IRFPA) flexible manufacturing", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189243; https://doi.org/10.1117/12.189243
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