7 October 1994 Point defects in HgCdTe by deep-level transient spectroscopy (DLTS)
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Deep-level transient spectroscopy (DLTS) measurements were performed on midwavelength p+n HgCdTe mesa diodes grown by LPE and p+n HgCdTe planar heterostructures grown on CdZnTe wafers by MBE. The DLTS spectra of the MBE samples showed the presence of at least two hole traps, while at least two shallower electron traps were observed from the LPE samples. In addition to DLTS measurements, the diodes were also studied using double correlation DLTS (DDLTS) and current transient spectroscopy (CTS). The DDLTS spectra showed sharper peaks than the corresponding DLTS spectra. CTS measurements complement the DLTS data in the temperature range where the diode's leakage current is too high for capacitance measurements. These measurements revealed the presence of additional trapping centers in the LPE samples studied. This paper discusses the interpretation of these results and the suitability of the DLTS technique for the study of point defects in HgCdTe.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jose E. Colon, Jose E. Colon, Jagmohan Bajaj, Jagmohan Bajaj, Jose M. Arias, Jose M. Arias, Majid Zandian, Majid Zandian, John G. Pasko, John G. Pasko, } "Point defects in HgCdTe by deep-level transient spectroscopy (DLTS)", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189247; https://doi.org/10.1117/12.189247


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