7 October 1994 Properties of the oxidation on Hg1-xCdxTe by ellipsometry
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Abstract
The rates of growth on oxide films on polished Hg1-xCdxTe surfaces exposed to room air are obtained by measuring the ellipticity of polarized light reflected from the surfaces with the ellipsometer. Plots of thickness vs. the logarithm of the time in room air are linear after about 1500 minutes with slopes of 15 angstroms/decade. Immediately after polishing the native oxide film is proximately 10 angstroms thick and increase in thickness by about 36 angstroms after one week. Measurements utilizing polarized light are made of the increase in film thickness with time on Hg1-xCdxTe surfaces immersed in water. The regular of the anodization voltage versus time was given. With ellipsometer, the thickness of anodic oxides film grown on Hg1-xCdxTe is determined. Further details and discussion will be presented.
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Xierong Hu, Xierong Hu, Runqing Jiang, Runqing Jiang, Fei-Fei Wu, Fei-Fei Wu, Shuzhi Zhang, Shuzhi Zhang, Xiangyang Li, Xiangyang Li, Jiaxiong Fang, Jiaxiong Fang, Guosen Xu, Guosen Xu, Jie Shen, Jie Shen, Xiaoning Hu, Xiaoning Hu, } "Properties of the oxidation on Hg1-xCdxTe by ellipsometry", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189232; https://doi.org/10.1117/12.189232
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