7 October 1994 Recent advances in staring hybrid focal plane arrays: comparison of HgCdTe, InGaAs, and GaAs/AlGaAs detector technologies
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Abstract
A comparison of photovoltaic HgCdTe/Al2O3, HgCdTe/CdZnTe, InGaAs/InP and photoconductive GaAs/AlGaAs quantum well infrared photodetector detector technologies has been conducted at Rockwell by exploiting the ability to selectively hybridize disparate mosaic detector arrays to an assortment of silicon multiplexers. Hybrid FPA characteristics are reported as functions of operating temperature from 32.5 K to room temperature and at photon backgrounds from approximately equals 106 to mid-1016 photons/cm2-sec. The staring arrays range in size from about sixteen thousand to over a million pixels. Background-limited detectivities significantly exceeding 1014 cm-(root)Hz/W were achieved.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Jose M. Arias, G. M. Williams, Kadri Vural, Donald E. Cooper, Scott A. Cabelli, Carl F. Bruce, "Recent advances in staring hybrid focal plane arrays: comparison of HgCdTe, InGaAs, and GaAs/AlGaAs detector technologies", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189236; https://doi.org/10.1117/12.189236
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KEYWORDS
Sensors

Quantum well infrared photodetectors

Staring arrays

Mercury cadmium telluride

Quantum efficiency

Detector arrays

Amplifiers

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