7 October 1994 Selectively plated infrared-sensitive lead sulfide layers
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Lead chalcogenides are well-known photoconductors in the infrared region. Lead sulfide detectors occupy an important position among infrared detectors owing to their high sensitivity in the near infrared region (1 - 3.2 microns), room temperature operation, low noise and ease of preparation. In this paper, we report for the first time the preparation of infrared sensitive photoconductive lead sulfide films by the swab plating technique. Adherent, non-porous `p' type lead sulfide films of thickness 3 - 4 microns were obtained. These films, after heat- treatment at 550 degree(s)C, showed a dark resistance of 25 - 30 kilo-ohms with a photosensitivity of 0.28. The films have been characterized by XRD, optical and photoconductivity measurements.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Subramanian, V. Subramanian, K. R. Murali, K. R. Murali, N. Rangarajan, N. Rangarajan, A. S. Lakshmanan, A. S. Lakshmanan, } "Selectively plated infrared-sensitive lead sulfide layers", Proc. SPIE 2274, Infrared Detectors: State of the Art II, (7 October 1994); doi: 10.1117/12.189234; https://doi.org/10.1117/12.189234


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