11 November 1994 Imaging properties of a silicon wafer x-ray telescope
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Abstract
Silicon wafers have excellent optical properties--low microroughness and good medium-scale flatness--which make them suitable candidates for inexpensive flat-plate grazing-incidence x- ray mirrors. On short spatial scales (< 3 mm) the surface quality of silicon wafers rivals that expected of the Advanced X-Ray Astrophysics Facility high-resolution optics. On larger spatial scales, however, performance may be degraded by the departure from flatness of the wafer and by distortions induced by the mounting scheme. In order to investigate such effects, we designed and constructed a prototype silicon-wafer x-ray telescope. The device was then tested in both visible light and x rays. The telescope module consists of 94 150-mm-diameter wafers, densely packed into the first stage of a Kirkpatrick-Baez configuration. X-ray tests at three energies (4.5, 6.4, and 8.0 keV) showed an energy-independent line spread function with full width at half maximum of 150 arcseconds, dominated by deviations from large-scale flatness.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marshall K. Joy, Jeffery J. Kolodziejczak, Martin C. Weisskopf, Sara Batson Fair, Brian D. Ramsey, "Imaging properties of a silicon wafer x-ray telescope", Proc. SPIE 2279, Advances in Multilayer and Grazing Incidence X-Ray/EUV/FUV Optics, (11 November 1994); doi: 10.1117/12.193144; https://doi.org/10.1117/12.193144
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KEYWORDS
Semiconducting wafers

Silicon

X-rays

X-ray telescopes

Mirrors

Sensors

Telescopes

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