Effect of visible and near-infrared illumination on the mid-infrared transmission of silicon and germanium

Harvey Nicholas Rutt

doi:10.1117/12.187332

28 September 1994 Effect of visible and near-infrared illumination on the mid-infrared transmission of silicon and germanium

Harvey Nicholas Rutt

Author Affiliations +

Proceedings Volume 2286, Window and Dome Technologies and Materials IV; (1994) https://doi.org/10.1117/12.187332
Event: SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, 1994, San Diego, CA, United States

Abstract

Germanium and silicon optical transmissive components are widely used in infrared lenses, filter substrates, etc. We demonstrate that severe loss can be induced in some germanium samples by illumination in the visible or near infrared with power densities in the region of watts per square centimeter. The absorption arises from light hole to heavy hole inter valence band transitions. The strength of the absorption induced depends on a number of parameters not normally controlled in optical applications, such as minority carrier lifetime and surface recombination velocity. The effect is very much weaker in silicon.

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Harvey Nicholas Rutt "Effect of visible and near-infrared illumination on the mid-infrared transmission of silicon and germanium", Proc. SPIE 2286, Window and Dome Technologies and Materials IV, (28 September 1994); https://doi.org/10.1117/12.187332

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