28 September 1994 Residual stress measurements on polycrystalline diamond
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The magnitude of the residual stresses in thick samples of polycrystalline diamond were measured by the sine squared, angular resolved x-ray diffraction (XRD) technique and by detailed analysis of electron channeling patterns from individual grains in polished diamond films using a scanning electron microscope. The XRD measurements were made on samples produced by both plasma torch and microwave plasma low pressure growth techniques with a range of microstructures. Results show that residual levels of stress +/- 0.3 GPa can be generated inside the thinner films on substrates by thermal expansion mismatches, while average residual stress in free standing 0.5 to 2 mm thick diamond plates is negligible. Within the individual grains of the thicker films, localized stress variations on the order of +/- 0.5 to 0.8 GPa can be distinguished.
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Alan B. Harker, Alan B. Harker, D. G. Howitt, D. G. Howitt, Siduo Chen, Siduo Chen, John F. Flintoff, John F. Flintoff, M. R. James, M. R. James, } "Residual stress measurements on polycrystalline diamond", Proc. SPIE 2286, Window and Dome Technologies and Materials IV, (28 September 1994); doi: 10.1117/12.187347; https://doi.org/10.1117/12.187347

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