28 September 1994 Residual stress measurements on polycrystalline diamond
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Abstract
The magnitude of the residual stresses in thick samples of polycrystalline diamond were measured by the sine squared, angular resolved x-ray diffraction (XRD) technique and by detailed analysis of electron channeling patterns from individual grains in polished diamond films using a scanning electron microscope. The XRD measurements were made on samples produced by both plasma torch and microwave plasma low pressure growth techniques with a range of microstructures. Results show that residual levels of stress +/- 0.3 GPa can be generated inside the thinner films on substrates by thermal expansion mismatches, while average residual stress in free standing 0.5 to 2 mm thick diamond plates is negligible. Within the individual grains of the thicker films, localized stress variations on the order of +/- 0.5 to 0.8 GPa can be distinguished.
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Alan B. Harker, D. G. Howitt, Siduo Chen, John F. Flintoff, M. R. James, "Residual stress measurements on polycrystalline diamond", Proc. SPIE 2286, Window and Dome Technologies and Materials IV, (28 September 1994); doi: 10.1117/12.187347; https://doi.org/10.1117/12.187347
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