13 October 1994 Structural change in sol-gel-derived SiO2 films using ultraviolet irradiation
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Abstract
Photo-induced changes in structure of sol-gel derived SiO2 films were studied in order to explore a possibility of densification of sol-gel films at room temperature using energetic photons. Gel films which were produced on silicon substrates by dip-coating of sols prepared through hydrolysis of tetraethoxysilane were subjected to synchrotron radiation at room temperature. Structural changes of the gel films were investigated by ellipsometry and infrared spectroscopy. The radiation resulted in an increase in refractive index, a decrease in thickness of the films and a loss of OH groups. Increase in temperature of the films was less than 50 degree(s)C during the irradiation. The results indicate that ultraviolet lights induce densification of gel films through electronic excitation.
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Hiroaki Imai, Hiroaki Imai, Hiroshi Hirashima, Hiroshi Hirashima, Koichi Awazu, Koichi Awazu, Hideo Onuki, Hideo Onuki, } "Structural change in sol-gel-derived SiO2 films using ultraviolet irradiation", Proc. SPIE 2288, Sol-Gel Optics III, (13 October 1994); doi: 10.1117/12.189015; https://doi.org/10.1117/12.189015
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