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3 October 1994 Stable second-order nonlinearity in SiO2-based waveguides on Si using temperature/electric-field poling
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Abstract
A stable second-order nonlinearity established by temperature/electric-field poling of a SiO2-based waveguide stack on a Si substrate with a nonlinearity comparable to that observed in bulk fused silica samples (approximately 1 pm/V) is described. Samples with various layer thickness and composition are compared to determine important parameters in generating the second-order nonlinearity. Temperature and voltage studies are also presented to help understand the dynamics of the nonlinearity.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Myers, Steven R. J. Brueck, and Richard P. Tumminelli "Stable second-order nonlinearity in SiO2-based waveguides on Si using temperature/electric-field poling", Proc. SPIE 2289, Doped Fiber Devices and Systems, (3 October 1994); https://doi.org/10.1117/12.188708
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