Paper
28 September 1994 Change in FWHM of AlGaAs LEDs subjected to mixed neutron and gamma radiation
Joel M. Hatch
Author Affiliations +
Abstract
AlGaAs light emitting diodes were irradiated in a mixed neutron/gamma environment produced by a research reactor operating at steady state power levels. Changes in the DUTs power and spectral output were measured following an annealing period of 24-30 hours. The LED's total output power decreased with increasing fluence, and the device's spectral output/full width half maximum peaks shifted. Initially, the LED radiated light at two output peak wavelengths of 820 and 890 nm. Following a cumulative irradiation of approximately equals 1016 n/cm2 (GaAs), the second radiation peak was reduced to less than 0.5% of the DUT's total output power, and the lower peak shifted to a longer wavelength of 833 nm.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joel M. Hatch "Change in FWHM of AlGaAs LEDs subjected to mixed neutron and gamma radiation", Proc. SPIE 2290, Fiber Optic Materials and Components, (28 September 1994); https://doi.org/10.1117/12.187426
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Photons

Gallium arsenide

Aluminum

Absorption

Annealing

Gamma radiation

RELATED CONTENT


Back to Top