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5 August 1994 Comparative study on photoluminescence of porous silicon fabricated by different methods
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182128
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
Different methods, including electrochemical etching, chemical staining, chemical staining plus electrochemical etching and immersion in boiling water have been used for fabricating or treating porous silicon samples. Comparative photoluminescence spectra of porous silicon samples. Comparative photoluminescence spectra of porous silicon fabricated by these techniques have been obtained. Porous silicon arrays have also been fabricated by electrochemical etching and chemical staining plus electrochemical etching on both high and low resistivity silicon wafers. Blue and green photoluminescence (at 440 nm, 460 nm and 540 nm peak wavelengths) on low resistivity silicon wafer was obtained from porous silicon made by electrochemical etching, chemical staining with UV laser illumination, and boiling treatment.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yingjun Gao, Deepak G. Uttamchandani, and Brian Culshaw "Comparative study on photoluminescence of porous silicon fabricated by different methods", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182128
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