5 August 1994 Electric field effect on exciton emission in the photoluminescence from the ZnCdSe-ZnSe superlattices
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182065
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
Photoluminescence (PL) measurement of ZnCdSe-ZnSe strained layer superlattices structures subjected to an electric field has been performed. As well as the shifts of the PL energy, the main peak, due to the exciton emission was shifted to the lower energy side with increasing electric field. The reason is related to the field-induced electron-hole separation in the ZnCdSe well.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiying Zhang, Jiying Zhang, Xiwu Fan, Xiwu Fan, Baojun Yang, Baojun Yang, De Zen Shen, De Zen Shen, Zhuhong Zheng, Zhuhong Zheng, } "Electric field effect on exciton emission in the photoluminescence from the ZnCdSe-ZnSe superlattices", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182065; https://doi.org/10.1117/12.182065
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