5 August 1994 Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182139
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
An analytical model of (delta) -doped quantum well is developed. The results show that by using (delta) -doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of (delta) -doped quantum well.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hanyu Sheng, Soo-Jin Chua, "Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182139; https://doi.org/10.1117/12.182139
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