5 August 1994 Microspectrophotometric studies of optical waveguide in silicon wafer with buried oxide layer
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182036
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
Structures obtained using high-energy ion implantation into silicon are the novel object for optical diagnostics'. Implanted layers are characterized by significant spatial blur of optical transitions, contrary to the traditional sharp filmsubstrate interfaces. When oxygen ions are implanted at 1 MeV into monociystalline silicon, the projected range equals to R1.2 tm and the half width of depth profile of oxygen concentration is equal approximately to LR=O.2 m.2 Optical properties of this structure may be significantly different depended on the wavelength ? of sounding light. An approximation of sharp interface AR,<?Jn is true (here n is the refractive index of silicon). Experimental result on light reflection from this structure in the visible and MR ranges can not be predicted beforehand. On the other hand, it may be expected that the substantial gradient of refractive index is similar to sharp reflecting interface, especially with increasing incidence angle. The basic problem for optical diagnostics of the implanted structures is to determine the depth profile of refractive index. Such experimental determination is required for the synthesis of planar optical waveguides using ion implantation. Some preliminary results relating to the formation of the physical concept of interaction oflight with implanted structures are presented in this paper.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Y. Gasilov, A. Y. Gasilov, Alexander N. Magunov, Alexander N. Magunov, M. I. Makovijchuk, M. I. Makovijchuk, Evgenii O. Parshin, Evgenii O. Parshin, } "Microspectrophotometric studies of optical waveguide in silicon wafer with buried oxide layer", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182036; https://doi.org/10.1117/12.182036
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