5 August 1994 Optical endpoint detection of plasma etching and RIE for LSI circuits
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182173
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
This paper describes briefly importance of endpoint detection of the plasma etching and reactive-ion etching for LSI and VLSI circuits. The monitoring principle, design ideal and construction of the instrument for endpoint monitoring are described in the paper and monitoring results on line have been given. Finally the paper will discuss the load effect of the plasma etching and laser lateral interference influenced on monitor precision.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Baoyong Mi, Baoyong Mi, Kefei Song, Kefei Song, De-Fu Hao, De-Fu Hao, Qingying Zhang, Qingying Zhang, } "Optical endpoint detection of plasma etching and RIE for LSI circuits", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182173; https://doi.org/10.1117/12.182173
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