Study of photovoltaic properties of GexSi1-x/Si quantum well structures

Wenzhang Zhu; Qihua Shen; Jintai Chen

doi:10.1117/12.182131

5 August 1994 Study of photovoltaic properties of Ge_xSi_1-x/Si quantum well structures

Wenzhang Zhu, Qihua Shen, Jintai Chen

Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182131
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China

Abstract

In this paper, we report the photovoltage spectroscopy study of type-I and type-II GeSi/Si strained layer quantum wells at different temperatures ranging from 18 to 300 K. The experimental results show that for all the samples studied there is strong photovoltage at longwave bands in which the photon energy is less than the bandgap of Si. Four intrinsic exciton optical transitions and the saturation of exciton absorption have been observed. The mechanism for the photovoltaic effect in GeSi/Si quantum well structures is discussed.

Citation Download Citation

Wenzhang Zhu, Qihua Shen, and Jintai Chen "Study of photovoltaic properties of Ge_xSi_1-x/Si quantum well structures", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); https://doi.org/10.1117/12.182131

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