5 August 1994 Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector
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Proceedings Volume 2321, Second International Conference on Optoelectronic Science and Engineering '94; (1994) https://doi.org/10.1117/12.182008
Event: Optoelectronic Science and Engineering '94: International Conference, 1994, Beijing, China
Abstract
For InGaSb/GaSb strained-layer structure, the effects of elastic strain are induced by lattice mismatch on the effective masses and band offsets at (Gamma) -point. We found that the effective masses (electron, light- and heavy-hole) become anisotropic, and the band offsets are also effected in a strained layer. The E-k relations were calculated using the method of linear combination of atomic orbitals. Such a structure is, at the same time, of type I for heavy-hole and type II for light-hole. Mini-subbands in InGaSb/GaSb strained-layer superlattice have been calculated using the modified Kronig-Penney model. This strained structure can be applied as two-mode transition photoelectronic devices.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan-Kuin Su, Yan-Kuin Su, S. M. Chen, S. M. Chen, C. F. Yu, C. F. Yu, } "Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector", Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182008; https://doi.org/10.1117/12.182008
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