7 December 1994 Advanced mask and reticle generation using EBES4
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Mask and reticle requirements for 256 Mb to 1 Gb DRAM production will put stringent demands on tool capability. The EBES4 electron beam lithography system architecture and subsystems were designed to optimize overlay and edge placement resolution to meet the needs of these leading edge technologies. EBES4 uses raster scan micro-figure exposure and vector scan major and minor field deflection to achieve 15.6 nm position resolution. The exposure source is a long life, stable thermal field emitter with current stability of better than 0.5% for over 10,000 hr. This source provides single pass exposure doses up to 16 (mu) C/cm2, supporting lower sensitivity resists with no throughput penalty. A VAXTM based data control structure combined with a compressed data format allows per figure dose assignments. This design supports future writing requirements and enables the system to maintain high throughput while processing the very large databases required for optical proximity corrections (OPC) and e-beam proximity effect corrections (PEC). This paper describes how the EBES4 architecture differs in significant ways from the traditional raster scan e-beam and optical exposure technologies. Performance of the EBES4 is described with respect to advanced reticle performance requirements: overlay accuracy, edge placement resolution, proximity effect correction, and optical proximity correction.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David M. Walker, David M. Walker, D. C. Fowlis, D. C. Fowlis, Sheldon M. Kugelmass, Sheldon M. Kugelmass, K. A. Murray, K. A. Murray, C. M. Rose, C. M. Rose, "Advanced mask and reticle generation using EBES4", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195846; https://doi.org/10.1117/12.195846


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