Application of charge-dissipation material in MEBES phase-shift mask fabrication

Zoilo C. H. Tan; Charles A. Sauer

doi:10.1117/12.195834

7 December 1994 Application of charge-dissipation material in MEBES phase-shift mask fabrication

Zoilo C. H. Tan, Charles A. Sauer

Proceedings Volume 2322, 14th Annual BACUS Symposium on Photomask Technology and Management; (1994) https://doi.org/10.1117/12.195834
Event: 14th Annual BACUS Symposium on Photomask Technology and Management, 1994, Santa Clara, CA, United States

Abstract

Several charge dissipation materials were evaluated for their ability to improve the overlay accuracy during phase shift mask (PSM) registered writing on a MEBES system. These included an organic conductive polymer and a number of thin inorganic films, which were applied above or below the resist on a coated mask. When used with the resists, all conductive materials evaluated were capable of providing adequate charge dissipation during registered writing. Overlay accuracy of mean + 3 sigma <EQ 0.07 micrometers was obtained in both axes. The water-cast conductive polymer was found to be the easiest to use.

Citation Download Citation

Zoilo C. H. Tan and Charles A. Sauer "Application of charge-dissipation material in MEBES phase-shift mask fabrication", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); https://doi.org/10.1117/12.195834

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