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7 December 1994 Application of charge-dissipation material in MEBES phase-shift mask fabrication
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Several charge dissipation materials were evaluated for their ability to improve the overlay accuracy during phase shift mask (PSM) registered writing on a MEBES system. These included an organic conductive polymer and a number of thin inorganic films, which were applied above or below the resist on a coated mask. When used with the resists, all conductive materials evaluated were capable of providing adequate charge dissipation during registered writing. Overlay accuracy of mean + 3 sigma <EQ 0.07 micrometers was obtained in both axes. The water-cast conductive polymer was found to be the easiest to use.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zoilo C. H. Tan and Charles A. Sauer "Application of charge-dissipation material in MEBES phase-shift mask fabrication", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994);

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