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7 December 1994 Implementation of high-contrast novolak resist process for sub-0.5-um e-beam lithography
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The use of interrupt develop has been reported to enhance the contrast and resolution of novolak resist systems for e-beam lithography. Experience with interrupt develop has demonstrated the ability to control sensitivity and contrast independent from the exposure dose. High contrast and flexible sensitivity are primarily due to the interaction of induction effects of the novolak resist and the length of the develop step. The induction effect is primarily dependent on absorbed energy in the resist. Understanding the distribution of absorbed energy in the resist allows use of the induction effect to control resist profile and image size. A sidewall passivation phenomena results from interrupting the develop process. The passivation enhances the directionality of develop, yielding additional resist profile control. Three diazonapthoquinone novolak resists have been implemented for the fabrication of x-ray masks. During implementation of the resists, the molecular weight of the base resin was found to have a major influence on contrast and image quality. The results show the resolution and image size control achieved using systematic interrupt develop processing.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dennis J. Williams "Implementation of high-contrast novolak resist process for sub-0.5-um e-beam lithography", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994);

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