7 December 1994 Optimizing proximity correction for wafer fabrication processes
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A key requirement for any proximity correction method is the ability to accurately predict proximity effects for any given circuit configuration. In this paper we present a methodology for characterizing proximity effects from measurements taken on a processed wafer. The characterization will determine what types of effects are present, which effects can be corrected, and it will quantify behavior parameters for a generalized proximity error model.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John P. Stirniman, Michael L. Rieger, "Optimizing proximity correction for wafer fabrication processes", Proc. SPIE 2322, 14th Annual BACUS Symposium on Photomask Technology and Management, (7 December 1994); doi: 10.1117/12.195819; https://doi.org/10.1117/12.195819

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